Monolithically Integrated Opto-Electrical NOR Gate Using Light Emitting Transistors
Journal
25th Opto-Electronics and Communications Conference, OECC 2020
Date Issued
2020
Author(s)
Abstract
We develop an opto-electrical NOR gate, using Light-Emitting Transistors (LET) on GaAs substrate by the monolithically integrated fabrication. By dual-input and dual-output (electrical and optical) characteristics, it can be applied to Opto-Electrical Integrated Circuits (OEICs). ? 2020 IEEE.
Subjects
Gallium arsenide; III-V semiconductors; Light emission; Optoelectronic devices; Phototransistors; Substrates; Dual outputs; GaAs substrates; Light-emitting transistors; Monolithically integrated; NOR gates; Monolithic integrated circuits
SDGs
Type
conference paper