Performance improvement using diluted KOH passivation on recessed-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors grown on 8-inch silicon(111) substrates
Journal
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Date Issued
2017
Author(s)
Abstract
In this letter, an effective surface recovery treatment by diluted KOH passivation is demonstrated. With this treatment, an enhanced-mode (threshold voltage =0.61V), high on-state current (175 mA/mm at overdrive voltage = 2 V), low on resistance (9.29 Ω-mm), less hysteresis (from 0.8V to 0.6V) AlGaN/GaN MOSHEMT is achieved.
Subjects
Gallium nitride; Manufacture; Metals; MOS devices; Oxide semiconductors; Passivation; Semiconducting silicon; Semiconductor device manufacture; Semiconductor junctions; Substrates; Surface treatment; Threshold voltage; AlGaN/gaN; Enhanced-mode; Gate recess; MOS-HEMT; Surface recovery; High electron mobility transistors
Type
conference paper