https://scholars.lib.ntu.edu.tw/handle/123456789/580588
標題: | Small Signal Modeling of GaN-on-Si HEMT with Leaky Buffer | 作者: | CHAO-HSIN WU Chen Y.-T Chan L.-C Ho Y.-L Ho Y.-T CHAO-HSIN WU |
關鍵字: | Aluminum gallium nitride; Cutoff frequency; Electron mobility; Gallium nitride; III-V semiconductors; Scattering parameters; Wide band gap semiconductors; Algan/gan high electron-mobility transistors; Buffer effect; Current gain cutoff frequency; High electron mobility transistor (HEMT); Maximum oscillation frequency; Silicon substrates; Simulation accuracy; Small signal model; High electron mobility transistors | 公開日期: | 2019 | 來源出版物: | 2019 IEEE 4th International Future Energy Electronics Conference, IFEEC 2019 | 摘要: | This letter reports on AlGaN/GaN high-electron mobility transistors (HEMTs) on high-resistive silicon substrate using a modified Small-signal model to improve the simulation accuracy of S-parameters. Compared with conventional Small-signal model our model can simulate the leaky buffer effect, significantly increased the S-parameters simulation. The key reasons for improved the simulation results are due to the additional capacitances and resistances added in the model. The maximum oscillation frequency fmax is 62.8 GHz and current gain cut off frequency fT is 63.81 GHz after de-embedding. ? 2019 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85082392794&doi=10.1109%2fIFEEC47410.2019.9014673&partnerID=40&md5=98d5bc2981ae3d0d42ffe529ac596eb8 https://scholars.lib.ntu.edu.tw/handle/123456789/580588 |
DOI: | 10.1109/IFEEC47410.2019.9014673 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。