https://scholars.lib.ntu.edu.tw/handle/123456789/580609
標題: | Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition | 作者: | CHEE-WEE LIU Tsai C.-E Lu F.-L Chen P.-S CHEE-WEE LIU |
關鍵字: | Boron; Chemical vapor deposition; Doping (additives); Epitaxial growth; Semiconductor alloys; Boron concentrations; Boron-doped; Boron-doping; First principle calculations; Germanium tins; Phosphorus doping; Solid-phase; Thermal-annealing; Tin alloys | 公開日期: | 2018 | 卷: | 660 | 起(迄)頁: | 263-266 | 來源出版物: | Thin Solid Films | 摘要: | Although the Sn content in GeSn can reach 10% using chemical vapor deposition, the reduction of Sn content by in-situ boron doping and solid phase doping by chemical vapor deposition are observed. The Sn loss increases with the increasing boron concentration in GeSn:B alloys, while there is no Sn reduction at the similar phosphorus doping level in GeSn:P. Based on the first principle calculations, the energy for boron to place Sn in GeSn is lower than that for boron to place Ge, indicating that boron atoms prefer to occupy Sn sites. The Sn loss is more serious for boron-implanted GeSn with thermal annealing at 400 °C than in-situ boron-doped GeSn even with 500 °C thermal annealing. ? 2018 Elsevier B.V. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85048726386&doi=10.1016%2fj.tsf.2018.06.027&partnerID=40&md5=472e356f63d2dcbbb8335f938c7b0744 https://scholars.lib.ntu.edu.tw/handle/123456789/580609 |
ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2018.06.027 |
顯示於: | 電機工程學系 |
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