https://scholars.lib.ntu.edu.tw/handle/123456789/580622
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tu C.-T | en_US |
dc.contributor.author | Huang Y.-S | en_US |
dc.contributor.author | Lu F.-L | en_US |
dc.contributor.author | Liu H.-H | en_US |
dc.contributor.author | Lin C.-Y | en_US |
dc.contributor.author | Liu Y.-C | en_US |
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.date.accessioned | 2021-09-02T00:03:54Z | - |
dc.date.available | 2021-09-02T00:03:54Z | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 01631918 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081058169&doi=10.1109%2fIEDM19573.2019.8993537&partnerID=40&md5=bb372ed98b5d71cc687d342faf39598e | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/580622 | - |
dc.description.abstract | Si incorporation as small as 2% into Ge can achieve sufficient etching selectivity of heavily phosphorus- doped Ge sacrificial layers over unintentionally doped Ge0.98Si0.02 to form two stacked Ge0.98Si0.02 nanowire channels, and introduce 0.27% uniaxial tensile strain for the electron mobility enhancement. The alloy scattering is still minimal for 2% Si. The parasitic Ge/Si channel underneath the Ge0.98Si0.02 channels is completely removed by optimized etching. The infrared response of the parasitic channel is a non-destructive method to further confirm the removal of the parasitic channel. VT can be tuned by PMA, and ION can be enhanced by short LG. Record ION of 48 μA at VOV=VDS=0.5V and record Q (Gm,max/SSSAT) of 8.3 at VDS=0.5V with LG = 40 nm are achieved among Ge nFETs. The results are comparable to Si nFETs. ? 2019 IEEE. | - |
dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.subject | Electron devices; Etching; Germanium; Ions; Nondestructive examination; Semiconductor alloys; Silicon; Tensile strain; Etching selectivity; Infrared response; Mobility enhancement; Nondestructive methods; Optimized etching; Phosphorus-doped; Sacrificial layer; Uniaxial tensile strain; Si-Ge alloys | - |
dc.title | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/IEDM19573.2019.8993537 | - |
dc.identifier.scopus | 2-s2.0-85081058169 | - |
dc.relation.journalvolume | 2019-December | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。