https://scholars.lib.ntu.edu.tw/handle/123456789/580627
標題: | Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack | 作者: | CHEE-WEE LIU Huang C.-H Huang Y.-S Chang D.-Z Lin T.-Y CHEE-WEE LIU |
關鍵字: | Deposition; Electrodes; Germanium; Hole mobility; MOSFET devices; Platinum; Al electrode; Interface trap density; Interfacial layer; p-MOSFETs; Pt electrode; Aluminum | 公開日期: | 2017 | 卷: | 64 | 期: | 4 | 起(迄)頁: | 1412-1417 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | Al electrode on Al2O3/GeOx/Ge dielectrics stack has smaller interface trap density than Pt electrode due to the AlGeO formation at the interface. The AlGeO interfacial layer (IL) is formed during Al deposition. Pt electrode deposition after Al capping/removal process also exhibits the low interface trap density behavior. The increasing Al electrode area decreases interface trap density, indicating the AlGeO passivation is only effective underneath Al electrode. AlGeO layer can effectively passivate Ge with scaled GeOx and Al2O3 thickness. The peak hole mobility in Ge p-MOSFETs with AlGeO IL is 277 cm2/V.s. ? 2017 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012979673&doi=10.1109%2fTED.2017.2658636&partnerID=40&md5=d2a7157a7a212186c1e95ec7379acab9 https://scholars.lib.ntu.edu.tw/handle/123456789/580627 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2017.2658636 |
顯示於: | 電機工程學系 |
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