Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack
Journal
IEEE Transactions on Electron Devices
Journal Volume
64
Journal Issue
4
Pages
1412-1417
Date Issued
2017
Author(s)
Abstract
Al electrode on Al2O3/GeOx/Ge dielectrics stack has smaller interface trap density than Pt electrode due to the AlGeO formation at the interface. The AlGeO interfacial layer (IL) is formed during Al deposition. Pt electrode deposition after Al capping/removal process also exhibits the low interface trap density behavior. The increasing Al electrode area decreases interface trap density, indicating the AlGeO passivation is only effective underneath Al electrode. AlGeO layer can effectively passivate Ge with scaled GeOx and Al2O3 thickness. The peak hole mobility in Ge p-MOSFETs with AlGeO IL is 277 cm2/V.s. ? 2017 IEEE.
Subjects
Deposition; Electrodes; Germanium; Hole mobility; MOSFET devices; Platinum; Al electrode; Interface trap density; Interfacial layer; p-MOSFETs; Pt electrode; Aluminum
Type
journal article