https://scholars.lib.ntu.edu.tw/handle/123456789/580631
標題: | Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence | 作者: | Ye H.-Y Chung C.-C Wong I.-H Lan H.-S CHEE-WEE LIU |
關鍵字: | Electron mobility; Nanowires; Surface roughness; Boltzmann transport; Channel conditions; Channel cross section; Circular channels; Narrow channel; Size dependence; Surface roughness scattering; Theoretical calculations; VLSI circuits | 公開日期: | 2018 | 起(迄)頁: | 1-2 | 來源出版物: | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 | 摘要: | The channel cross section geometry and size dependence of the electron mobility in Ge nanowire nFETs is studied by theoretical calculations for devices beyond the 7nm node. circular channels have the highest mobility for wide channels (width>7nm) operating at high overdrive voltage (>0.5V). While diamond-shaped channels have the highest mobility for wide channels operating at low overdrive voltage (<0.3V) and narrow channels (width<7nm). This is attributed mainly to the different surface roughness scattering at different channel conditions. Our calculation framework is based on Boltzmann transport and has been verified with the electron mobility extracted from the experimental data of junctionless nanowire nFET devices. ? 2018 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85050482809&doi=10.1109%2fVLSI-TSA.2018.8403824&partnerID=40&md5=d05780c94abb195d165cc54fcf9e1a82 https://scholars.lib.ntu.edu.tw/handle/123456789/580631 |
DOI: | 10.1109/VLSI-TSA.2018.8403824 |
顯示於: | 電機工程學系 |
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