https://scholars.lib.ntu.edu.tw/handle/123456789/580665
標題: | Modulation and Refinement of In-N re-Bonding of InGaN through in Post-Flow during a Refined Temper Fire Treatment Process | 作者: | Liu T.-Y Chen L.-C Lee C.-C Cheng Y Kuan C.-H Lin R.-M. CHIEH-HSIUNG KUAN |
關鍵字: | Fires; Flow rate; Full width at half maximum; III-V semiconductors; Semiconductor quantum wells; X ray diffraction analysis; Desorption rate; InGaN quantum wells; InGaN/GaN; Photoluminescence signals; Treatment process; Semiconductor alloys | 公開日期: | 2020 | 卷: | 8 | 起(迄)頁: | 224433-224438 | 來源出版物: | IEEE Access | 摘要: | In this article, we describe a subtle method for modulating and refining the indium-nitrogen (In-N) re-bonding effect of InGaN by employing an In post-flow during temper fire ( $\Delta T = 110\,^{\circ }\text{C}$ ) treatment. After optimizing the In flow rate and the temper fire treatment process, the In content in InGaN quantum wells (QWs) increased from 12.7 to 22.3% and the (102) epitaxy quality of InGaN improved, as revealed by the full-width at half-maximum (FWHM) of the X-ray diffractometry signal decreasing from 410 to 374 arcsec. In addition, the quality of a five InGaN/GaN multiple-QW epilayer surface also improved greatly when applying this technique. Merely by modulating the In post-flow rate (0, 5.6, 11.2, 16.8, 22.4, or $28.0~\mu $ mol/min), the InxGa1-xN photoluminescence signal (and FWHM) changed from 449 nm (58 nm) in the absence of In post-flow during the temper fire treatment process, to 523 nm (46 nm) when the In post-flow rate was $11.2~\mu $ mol/min, and to 534 nm (55 nm) when the In post-flow rate was $28.0~\mu $ mol/min. This technique is, therefore, effective at improving the InGaN quality and compensating for the In-N bond desorption rate. ? 2013 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098332410&doi=10.1109%2fACCESS.2020.3045178&partnerID=40&md5=815adbf044b563aa324c5fbe02fb1b5a https://scholars.lib.ntu.edu.tw/handle/123456789/580665 |
ISSN: | 21693536 | DOI: | 10.1109/ACCESS.2020.3045178 |
顯示於: | 電機工程學系 |
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