Modulation of QCSE in InGaN-based LEDs with truncated-hexagonal-pyramid patterned-sapphire substrates
Journal
Optics InfoBase Conference Papers
Journal Volume
Part F183-CLEO-SI 2020
Date Issued
2020
Author(s)
Chien C.-Y
Chen M.-H
Pai C.-W
Lee Y.-J
Huang C.-C
Su V.-C
CHIEH-HSIUNG KUAN
Abstract
A method for the modulation of QCSE inside multiple-quantum wells of InGaN-based LEDs is proposed and confirmed with photoluminescence, Raman spectra, and electroluminescence using an integrating sphere. ? OSA 2020 ? 2020 The Author(s)
Subjects
Electroluminescence; III-V semiconductors; Modulation; Sapphire; Semiconductor quantum wells; Hexagonal pyramids; InGaN-based LED; Integrating spheres; Patterned sapphire substrate; Light emitting diodes
Type
conference paper