A Large dynamic range current sensor using magnetic tunnel junction on 8' si process line
Journal
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Date Issued
2019
Author(s)
Abstract
A large dynamic range magnetic field sensor for the current sensing application was designed and successfully fabricated. In this paper, we had tuned the MTJ film structure, cap layer and devices shape to achieve the good linearity and sensitivity. After choice the suitable magnetic free layer and large aspect ratio MTJ cell design, the linear dynamic range and sensitivity of our TMR sensor are over 300 Oe and 0.07%/Oe respectively. ? 2019 IEEE.
Subjects
Aspect ratio; Magnetism; Tunnel junctions; VLSI circuits; Current sensing; Current sensors; Dynamic range; Film structure; Large aspect ratio; Linear dynamic ranges; Magnetic field sensors; Magnetic tunnel junction; Magnetic devices
SDGs
Type
conference paper