https://scholars.lib.ntu.edu.tw/handle/123456789/580734
標題: | Temperature Effect of Low-Damage Plasma for Nitrogen-Modification of Graphene | 作者: | Tsai M.-H Lin C.-H Chen W.-T Huang C.-H Woon W.-Y Lin C.-T. CHIH-TING LIN |
關鍵字: | Ammonia; Graphene; Nitrogen; Temperature; Ammonia plasma; Diffusion mechanisms; Graphene bilayers; Ion species; Nitrogen-doping; Raman and XPS; Substrate heating; Substrate temperature; Nitrogen plasma | 公開日期: | 2020 | 卷: | 9 | 期: | 12 | 來源出版物: | ECS Journal of Solid State Science and Technology | 摘要: | This work investigates temperature effects of low-damage plasma (LD plasma) treatment for nitrogen-modification graphene. Different from traditional nitrogen-modification graphene achieved by ammonia plasma, in this work, it is accomplished by the LD plasma with pure nitrogen. The analyses of Raman and XPS spectra show that the concentration of modified nitrogen raised with the substrate temperature from room temperature to 125 C. However, the decrease of nitrogen-modification ratio occurred as the substrate heating temperature higher than 150 C. This might be resulted from the diffusion mechanism of ion species away from the graphene surface. Observed from these experimental results, the highest nitrogen doping ratio on artificial-stacked graphene bilayers (ASGBs) sample occurred at the substrate-heating temperature of 125 C. Based on the developed method, advantages of nitrogen-modification graphene with less contamination can be achieved for further applications. ? 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098261463&doi=10.1149%2f2162-8777%2fabcf15&partnerID=40&md5=f0f9f3a6d34d63c468fbc52a41bf8509 https://scholars.lib.ntu.edu.tw/handle/123456789/580734 |
ISSN: | 21628769 | DOI: | 10.1149/2162-8777/abcf15 |
顯示於: | 電機工程學系 |
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