https://scholars.lib.ntu.edu.tw/handle/123456789/580781
標題: | Investigation of normally-off p-gan/algan/gan hemts using a self-terminating etching technique with multi-finger architecture modulation for high power application | 作者: | Chang Y.-C Ho Y.-L Huang T.-Y Huang D.-W DING-WEI HUANG CHAO-HSIN WU |
關鍵字: | Drain current; Etching; Gallium nitride; III-V semiconductors; Threshold voltage; Etching technique; Gallium nitride (GaN) high electronmobility transistor (HEMT); High currents; High power applications; Multi fingers; Multi-finger layouts; Number of fingers; Surface plasma; High electron mobility transistors | 公開日期: | 2021 | 卷: | 12 | 期: | 4 | 來源出版物: | Micromachines | 摘要: | Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2 /BCl3 /SF6-mixed gas plasma. This etching technique features accurate etching depth control and low surface plasma damage. Several devices with different gate widths and number of fingers were fabricated to investigate the effect on output current density. We then realized a high current enhancement-mode p-GaN HEMT device with a total gate width of 60 mm that exhibits a threshold voltage of 2.2 V and high drain current of 6.7 A. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85105013134&doi=10.3390%2fmi12040432&partnerID=40&md5=0edddcd2d4d40a7ee6d2f5c3650783d7 https://scholars.lib.ntu.edu.tw/handle/123456789/580781 |
ISSN: | 2072666X | DOI: | 10.3390/mi12040432 |
顯示於: | 電機工程學系 |
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