A 38-GHz High Linearity and High Efficiency Power Amplifier for 5G Applications in 65-nm CMOS
Journal
2020 50th European Microwave Conference, EuMC 2020
Pages
178-181
Date Issued
2021
Author(s)
Abstract
A 38-GHz high linearity and high efficiency power amplifier is implemented in 65-nm CMOS process. To improve the back-off efficiency, transistors of the driver stage are biased in deep class-AB. Insertion loss from output stage matching is only 1 dB, resulting in high efficiency. A two-stage common source PA is designed to provide enough gain. This PA achieves a 20.5-dB small-signal gain, 14.6-dBm PSAT, 35.8% peak power-added efficiency (PAE), 13.1-dBm P1dB, and 30.1% PAE1dB. The linearity, which is measured in error vector magnitude (EVM) of 64-QAM with 250 MHz bandwidth, is better than -25 dB, at the power level of 10.1-dBm output power with 17% PAE. The chip size including all pads is 0.2964 mm2. ? 2021 EuMA.
Subjects
CMOS integrated circuits; Efficiency; CMOS processs; Common source; Error vector magnitude; High efficiency power amplifiers; High linearity; High-efficiency; Output stages; Small signal gain; Power amplifiers
SDGs
Type
conference paper