A K-band high-Op1dB common-drain power amplifier with neutralization technique in 90-nm CMOS technology
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
29
Journal Issue
12
Pages
795-797
Date Issued
2019
Author(s)
Abstract
This letter presents a fully integrated K-band high output 1-dB compression point (OP1dB) power amplifier (PA) fabricated in the 90-nm CMOS process. Common-drain (CD) structure is adopted to achieve high OP1dB. Since the CD structure suffers from the poor stability and power gain, the proposed neutralization technique for the CD amplifier is used to improve both of them simultaneously. The measured results of the proposed PA demonstrate the saturated output power (Psat) of 22.9 dBm with 24.2% peak power-added efficiency (PAE), OP1dB of 22.5 dBm with 22.5% PAE. To the best of authors' knowledge, the proposed CD PA is the first CMOS CD PA above 10 GHz. ? 2019 IEEE.
Subjects
CMOS integrated circuits; 1dB compression point; Common drain; Fully integrated; K bands; Measured results; Neutralization technique; Poor stability; Saturated output power (Psat); Power amplifiers
Type
journal article