https://scholars.lib.ntu.edu.tw/handle/123456789/581003
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen C.-H | en_US |
dc.contributor.author | Sher P.-H | en_US |
dc.contributor.author | Chen C.-P | en_US |
dc.contributor.author | Choi W.-K | en_US |
dc.contributor.author | Bardeen C.J | en_US |
dc.contributor.author | Chiu T.-L | en_US |
dc.contributor.author | Wang J.-K | en_US |
dc.contributor.author | JIUN-HAW LEE | en_US |
dc.contributor.author | WING-KIT CHOI | en_US |
dc.creator | Chen C.-H;Sher P.-H;Chen C.-P;Choi W.-K;Bardeen C.J;Chiu T.-L;Wang J.-K;Lee J.-H. | - |
dc.date.accessioned | 2021-09-02T00:05:38Z | - |
dc.date.available | 2021-09-02T00:05:38Z | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 19327447 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096524667&doi=10.1021%2facs.jpcc.0c07887&partnerID=40&md5=f80f83f4c73a71f8a53b8e761a687ed2 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/581003 | - |
dc.description.abstract | In this study, exciton dynamics and singlet fission (SF) in amorphous rubrene thin films with various thicknesses from 5 to 100 nm were investigated. No clear X-ray diffraction peaks could be observed from these thin films, and their absorption and photoluminescence (PL) spectra were similar, although the PL slightly red-shifted with increasing rubrene thickness. However, temperature-dependent and time-resolved PL measurements showed dramatic differences between 5 and 100 nm thick films. There were two different relaxation channels in a 100 nm rubrene film, one of which is fission capable (channel a) and the other fission inactive (channel b). The SF process of species a was endothermic with activation energy 58 meV, as determined by time-resolved PL measurements carried out over a temperature range 300-77 K. On the other hand, for a 5 nm rubrene thin film, both this endothermic SF route and a weaker, exothermic SF channel below 160 K were observed with a SF rate of 0.22 ns-1. This was attributed to a new fission channel (channel c) that is probably due to molecular packing in the beginning of film growth. Channel c indicated a lower coupling molecular strength together with higher singlet energy that compensated the required thermal energy barrier for SF. A phase transition from amorphous to polycrystalline rubrene was observed when a thermal annealing treatment was applied to the 100 nm rubrene film. The PL spectral profile was dominated by microcrystals oriented with the crystal c-Axis parallel with the substrate, and these high density of SF "hotspots"increased the SF rate with only a weak temperature dependence from 120 to 300 K. ? 2020 ACS. All rights reserved. | - |
dc.relation.ispartof | Journal of Physical Chemistry C | - |
dc.subject | Activation energy; Excitons; Film growth; Light absorption; Microcrystals; Red Shift; Singlet fission; Temperature distribution; Thick films; Absorption and photoluminescence; Molecular packings; Relaxation channels; Rubrene thin films; Temperature dependence; Temperature dependent; Thermal annealing treatment; Time-resolved PL measurement; Thin films | - |
dc.title | Thickness-Dependent Exciton Dynamics in Thermally Evaporated Rubrene Thin Films | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/acs.jpcc.0c07887 | - |
dc.identifier.scopus | 2-s2.0-85096524667 | - |
dc.relation.pages | 25729-25737 | - |
dc.relation.journalvolume | 124 | - |
dc.relation.journalissue | 47 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Office of International Affairs | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0003-3888-0595 | - |
crisitem.author.orcid | 0000-0003-4233-0174 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Administrative Unit | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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