https://scholars.lib.ntu.edu.tw/handle/123456789/581010| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chuang Y | en_US |
| dc.contributor.author | Liu C.-Y | en_US |
| dc.contributor.author | Luo G.-L | en_US |
| dc.contributor.author | Li J.-Y. | en_US |
| dc.contributor.author | JIUN-YUN LI | zz |
| dc.creator | Chuang Y;Liu C.-Y;Luo G.-L;Li J.-Y. | - |
| dc.date.accessioned | 2021-09-02T00:05:40Z | - |
| dc.date.available | 2021-09-02T00:05:40Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.issn | 07413106 | - |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098648827&doi=10.1109%2fLED.2020.3041051&partnerID=40&md5=d6cae0ef23b9fba24d23f88ab45f44ac | - |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/581010 | - |
| dc.description.abstract | A record high electron mobility of 698 cm2/ Vcs in a tensile-strained Ge0.96Sn0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by lowerature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or GeSn relaxed buffers. A mesa FET structure was used to effectively reduce the OFF leakage by a recessed p/n junction in Ge. The ION/IOFF ratio in the mesa GeSn FETs is boosted by a factor of 100 compared to conventional planar devices. As the GeSn film becomes more tensile strained, the channel mobility is enhanced, which could be attributed to a higher carrier population in the Γ valley. ? 1980-2012 IEEE. | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.subject | Chemical vapor deposition; Electron mobility; Hall mobility; Hole mobility; MOSFET devices; Semiconductor alloys; Tensile strain; Carrier population; Channel mobility; Epitaxially grown; High electron mobility; Mobility enhancement; Planar devices; Relaxed buffer; Strain conditions; Tin alloys | - |
| dc.title | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | en_US |
| dc.type | journal article | - |
| dc.identifier.doi | 10.1109/LED.2020.3041051 | - |
| dc.identifier.scopus | 2-s2.0-85098648827 | - |
| dc.relation.pages | 10-13 | - |
| dc.relation.journalvolume | 42 | - |
| dc.relation.journalissue | 1 | - |
| item.openairetype | journal article | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0003-4905-9954 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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