|Title:||Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain||Authors:||Chuang Y
|Keywords:||Chemical vapor deposition; Electron mobility; Hall mobility; Hole mobility; MOSFET devices; Semiconductor alloys; Tensile strain; Carrier population; Channel mobility; Epitaxially grown; High electron mobility; Mobility enhancement; Planar devices; Relaxed buffer; Strain conditions; Tin alloys||Issue Date:||2021||Journal Volume:||42||Journal Issue:||1||Start page/Pages:||10-13||Source:||IEEE Electron Device Letters||Abstract:||
A record high electron mobility of 698 cm2/ Vcs in a tensile-strained Ge0.96Sn0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by lowerature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or GeSn relaxed buffers. A mesa FET structure was used to effectively reduce the OFF leakage by a recessed p/n junction in Ge. The ION/IOFF ratio in the mesa GeSn FETs is boosted by a factor of 100 compared to conventional planar devices. As the GeSn film becomes more tensile strained, the channel mobility is enhanced, which could be attributed to a higher carrier population in the Γ valley. ? 1980-2012 IEEE.
|Appears in Collections:||電機工程學系|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.