https://scholars.lib.ntu.edu.tw/handle/123456789/581011
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hong T.-Z. | en_US |
dc.contributor.author | Chang W.-H. | en_US |
dc.contributor.author | Agarwal A. | en_US |
dc.contributor.author | Huang Y.-T. | en_US |
dc.contributor.author | Yang C.-Y. | en_US |
dc.contributor.author | Chu T.-Y. | en_US |
dc.contributor.author | Chao H.-Y. | en_US |
dc.contributor.author | Chuang Y. | en_US |
dc.contributor.author | Chung S.-T. | en_US |
dc.contributor.author | Lin J.-H. | en_US |
dc.contributor.author | Luo S.-M. | en_US |
dc.contributor.author | Tsai C.-J. | en_US |
dc.contributor.author | Li M.-J. | en_US |
dc.contributor.author | Yu X.-R. | en_US |
dc.contributor.author | Lin N.-C. | en_US |
dc.contributor.author | Cho T.-C. | en_US |
dc.contributor.author | Sung P.-J. | en_US |
dc.contributor.author | Su C.-J. | en_US |
dc.contributor.author | Luo G.-L. | en_US |
dc.contributor.author | Hsueh F.-K. | en_US |
dc.contributor.author | Lin K.-L. | en_US |
dc.contributor.author | Ishii H. | en_US |
dc.contributor.author | Irisawa T. | en_US |
dc.contributor.author | Maeda T. | en_US |
dc.contributor.author | Wu C.-T. | en_US |
dc.contributor.author | Ma W.C.-Y. | en_US |
dc.contributor.author | Lu D.-D. | en_US |
dc.contributor.author | Kao K.-H. | en_US |
dc.contributor.author | Lee Y.-J. | en_US |
dc.contributor.author | Chen H.J.-H. | en_US |
dc.contributor.author | Lin C.-L. | en_US |
dc.contributor.author | Chuang R.W. | en_US |
dc.contributor.author | Huang K.-P. | en_US |
dc.contributor.author | Samukawa S. | en_US |
dc.contributor.author | Li Y.-M. | en_US |
dc.contributor.author | Tarng J.-H. | en_US |
dc.contributor.author | Chao T.-S. | en_US |
dc.contributor.author | Miura M. | en_US |
dc.contributor.author | Huang G.-W. | en_US |
dc.contributor.author | Wu W.-F. | en_US |
dc.contributor.author | JIUN-YUN LI | en_US |
dc.contributor.author | Shieh J.-M. | en_US |
dc.contributor.author | Wang Y.-H. | en_US |
dc.contributor.author | Yeh W.-K. | en_US |
dc.creator | Hong T.-Z;Chang W.-H;Agarwal A;Huang Y.-T;Yang C.-Y;Chu T.-Y;Chao H.-Y;Chuang Y;Chung S.-T;Lin J.-H;Luo S.-M;Tsai C.-J;Li M.-J;Yu X.-R;Lin N.-C;Cho T.-C;Sung P.-J;Su C.-J;Luo G.-L;Hsueh F.-K;Lin K.-L;Ishii H;Irisawa T;Maeda T;Wu C.-T;Ma W.C.-Y;Lu D.-D;Kao K.-H;Lee Y.-J;Chen H.J.-H;Lin C.-L;Chuang R.W;Huang K.-P;Samukawa S;Li Y.-M;Tarng J.-H;Chao T.-S;Miura M;Huang G.-W;Wu W.-F;Li J.-Y;Shieh J.-M;Wang Y.-H;Yeh W.-K. | - |
dc.date.accessioned | 2021-09-02T00:05:40Z | - |
dc.date.available | 2021-09-02T00:05:40Z | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 01631918 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102917891&doi=10.1109%2fIEDM13553.2020.9372001&partnerID=40&md5=31013973a9e46607a532c9c76ed8e15c | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/581011 | - |
dc.description.abstract | For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration. ? 2020 IEEE. | - |
dc.description.abstract | For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration. © 2020 IEEE. | - |
dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.subject | Chemical bonds; Electron devices; Silicon wafers; Surface treatment; Temperature; Bonding techniques; Chemical treatments; Heterogeneous integration; Layer transfer; Low temperatures; Multi-channel structure; Two channel; Wafer scale; Wafer bonding | - |
dc.subject.other | Chemical bonds; Electron devices; Silicon wafers; Surface treatment; Temperature; Bonding techniques; Chemical treatments; Heterogeneous integration; Layer transfer; Low temperatures; Multi-channel structure; Two channel; Wafer scale; Wafer bonding | - |
dc.title | First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT) | en_US |
dc.type | conference paper | en |
dc.relation.conference | 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 | - |
dc.identifier.doi | 10.1109/IEDM13553.2020.9372001 | - |
dc.identifier.scopus | 2-s2.0-85102917891 | - |
dc.relation.pages | 15.5.1 - 15.5.4 | - |
dc.relation.journalvolume | 2020-December | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-4905-9954 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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