|Title:||Multi-bit cryogenic flash memory on Si/SiGe and Ge/GeSi heterostructures||Authors:||Hou W.-C
|Keywords:||Controllers; Cryogenics; Interface states; MOS devices; Quantum theory; Silicon; VLSI circuits; Classical controllers; Classical logic; Cryogenic applications; Cryogenic temperatures; Quantum processors; Qubit devices; Retention time; Temperature controllers; Flash memory||Issue Date:||2021||Source:||VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings||Abstract:||
To realize a full-scale solid-state computer, both quantum processors and classical logic controllers are suggested to be operated at cryogenic temperatures to avoid the issues of signal latency through the room-temperature controllers and the corresponding wiring complexity, and interface of quantum processors and classical controllers. While cryo-CMOS devices have been the main focus recently to address those issues, there were only few works on cryogenic memory devices published . Potential candidates for cryogenic applications are based on Si MOS platforms, which would result in integration challenges with Si/SiGe  or Ge/GeSi  qubit devices. In this work, we demonstrate multi-bit cryogenic flash operations on both Si/SiGe and Ge/GeSi heterostructures for the first time at 4 K with a high endurance of > 103, long retention time of > 103 s, and a memory window of > 0.2V. ? 2021 IEEE.
|Appears in Collections:||電機工程學系|
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