|Title:||Strain Effects on Rashba Spin-Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures||Authors:||Tai C.-T
|Keywords:||Gases; Hole mobility; Quantum Hall effect; Spin orbit coupling; Confinement potential; Effects of strains; Phase coherence; Rashba spin-orbit coupling; Spin relaxation time; Spin splittings; Transport data; Weak localization; Germanium compounds||Issue Date:||2021||Source:||Advanced Materials||Abstract:||
A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000?cm2 V?1 s?1 is given. Both the Shubnikov–de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami–Larkin–Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. The analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge?heterostructures. ? 2021 Wiley-VCH GmbH
|Appears in Collections:||電機工程學系|
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