A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS
Journal
2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Pages
70-72
Date Issued
2020
Author(s)
Abstract
A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (Psat) of 15.5 and 13.1 dBm, peak power-Added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively. ? 2020 IEEE.
Event(s)
2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Subjects
CMOS integrated circuits; Efficiency; Millimeter waves; Radio waves; Class F power amplifier; Compression power; Harmonic impedances; Output matching network; Peak power; Saturation output power; Small signal gain; Voltage and current waveforms; Power amplifiers
SDGs
Type
conference paper