https://scholars.lib.ntu.edu.tw/handle/123456789/581201
標題: | Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function Variation | 作者: | Chiu P.-C Hu V.P.-H. VITA PI-HO HU |
關鍵字: | Capacitance; Gain measurement; Manufacture; MOSFET devices; Threshold voltage; Work function; Function variation; Line Edge Roughness; NC-SOI; Negative capacitance; Switching time; Threshold voltage variation; Voltage gain; Roughness measurement | 公開日期: | 2018 | 起(迄)頁: | 13-15 | 來源出版物: | 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings | 摘要: | We analyze the threshold voltage (Vt) and switching time (ST) variations of negative capacitance UTB SOI MOSFETs (NC-SOI) and UTB SOI MOSFETs considering line-edge roughness (LER) and work function variation (WFV). Compared to SOI, NC-SOI exhibits smaller LER induced Vt variations (σVt) and comparable WFV induced Vt variations. LER induced σVt can be suppressed by negative capacitance, while WFV induced σVt cannot be suppressed by negative capacitance. For considering LER, NC-SOI with larger subthreshold swing (SS) and worse short channel effect exhibits better capacitance matching, larger voltage gain (Av), and larger threshold voltage difference (VtNC-SOI-VtSOI), which mitigates the σVt. For NC-SOI MOSFETs, WFV induced σVt (=16.2mV) is larger than LER induced σVt (=3.8mV). For SOI MOSFETs, WFV and LER show comparable σVt. However, for both NC-SOI and SOI MOSFETs, LER induced ST variations are larger than the WFV induced ST variations. This is because transition charge (Δ Q) and effective drive current (Ieff) are positively correlated for considering WFV and negatively correlated for considering LER. Compared with SOI, NC-SOI considering LER and WFV exhibits smaller ST variations due to larger Ieff. ? 2018 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051508772&doi=10.1109%2fEDTM.2018.8421472&partnerID=40&md5=77c68c6b4a8f564ffad481b4f2a7137a https://scholars.lib.ntu.edu.tw/handle/123456789/581201 |
DOI: | 10.1109/EDTM.2018.8421472 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。