https://scholars.lib.ntu.edu.tw/handle/123456789/581272
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yeh, Po-Chun | en_US |
dc.contributor.author | Tu, Po-Tsung | - |
dc.contributor.author | Liu, Hsueh-Hsing | - |
dc.contributor.author | Hsu, Chien-Hua | - |
dc.contributor.author | Yang, Hsin-Yun | - |
dc.contributor.author | Fu, Yi-Keng | - |
dc.contributor.author | Lee, Li-Heng | - |
dc.contributor.author | Tzeng, Pei-Jer | - |
dc.contributor.author | YUH-RENN WU | - |
dc.contributor.author | Sheu, Shyh-Shyuan | - |
dc.contributor.author | Lo, Wei-Chung | - |
dc.contributor.author | Wu, Chih-I | - |
dc.creator | Yeh P.-C;Tu P.-T;Liu H.-H;Hsu C.-H;Yang H.-Y;Fu Y.-K;Lee L.-H;Tzeng P.-J;Wu Y.-R;Sheu S.-S;Lo W.-C;Wu C.-I. | - |
dc.date.accessioned | 2021-09-02T00:08:07Z | - |
dc.date.available | 2021-09-02T00:08:07Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108165120&doi=10.1109%2fVLSI-TSA51926.2021.9440075&partnerID=40&md5=0e1110583b3f1d3c637d4a7fdf25d509 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/581272 | - |
dc.description.abstract | In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with Lg = 250nm reaching ft/fmax = 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average ft = 48GHz with NU = 7.6% and average fmax = 42GHz with NU = 5%, revealing the outstanding uniformity of 8-inch standard CMOS manufacturing tools. ? 2021 IEEE. | - |
dc.relation.ispartof | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | - |
dc.subject | Aluminum gallium nitride; CMOS integrated circuits; Gallium nitride; III-V semiconductors; Silicon compounds; Silicon wafers; VLSI circuits; AlGaN/GaN HEMTs; CMOS Compatible; Compatible process; RF applications; RF measurements; Semi-automatics; Si substrates; Standard CMOS; High electron mobility transistors | - |
dc.title | CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/VLSI-TSA51926.2021.9440075 | - |
dc.identifier.scopus | 2-s2.0-85108165120 | - |
item.cerifentitytype | Publications | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
顯示於: | 電機工程學系 |
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