Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors
Journal
Journal of Physics D: Applied Physics
Journal Volume
54
Journal Issue
34
Date Issued
2021
Author(s)
Abstract
The electrical performance of thin-film transistors that use an amorphous oxide semiconductor (AOS) is significantly improved by incorporating metal cations as carrier suppressors. However, the effect of these elements on the performance of AOS-based photodetectors (PDs) is still unknown. This study uses a precursor containing lithium (Li) element and a sol-gel process to produce a Li-doped amorphous ZnSnO (a-ZTO) thin-film for UV PD applications. The results of x-ray photoelectron spectroscopy analysis show that the number of oxygen vacancies (V o) in a-ZTO thin-films decreases significantly from ?32.1% to ?14.4% after Li-doping (3 at%). The dark current decreases and the photocurrent increases in the ZTO-based PD so an ultra-high photo-to-dark current ratio (PDCR) of 1185 is achieved. The significant increase in PDCR means that solution-processed a-ZTO are eminently suited to use in UV PDs that use In-free AOSs. ? 2021 IOP Publishing Ltd.
Subjects
Li-doping
oxygen vacancy
sol-gel
ZnSnO photodetector
Dark currents
Indium alloys
Indium metallography
Lithium metallography
Oxide semiconductors
Photocurrents
Photodetectors
Photons
Semiconducting zinc compounds
Semiconductor doping
Sol-gel process
Thin film transistors
Thin films
X ray photoelectron spectroscopy
Amorphous oxide semiconductors
Dark current ratio
Electrical performance
Metal cation
Metal-semiconductor-metal uv photodetectors
Photodetectors (PDs)
Solution-processed
Ultra-high
Semiconducting tin compounds
Type
journal article