https://scholars.lib.ntu.edu.tw/handle/123456789/598401
標題: | Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography | 作者: | Chang T.-J Wang T.-Y Wang C.-I Huang Z.-D Jiang Y.-S Chou C.-Y Kao W.-C Chen M.-J. MIIN-JANG CHEN |
關鍵字: | Capacitance;Drain current;Ferroelectricity;Gate dielectrics;Helium;Ion beams;Ions;Silicon;Titanium nitride;Hydrogen silsesquioxane;Junctionless transistors;Nanoelectronic devices;Negative capacitance;Performance enhancements;Polarization switching;Short-channel effect;Sub-threshold swing(ss);Time domain analysis | 公開日期: | 2021 | 卷: | 9 | 期: | 26 | 起(迄)頁: | 8285-8293 | 來源出版物: | Journal of Materials Chemistry C | 摘要: | The performance enhancements of Si junctionless transistors (JLTs) with a short gate length (LG) below 10 nm by a pronounced ferroelectric (FE) gate dielectric were demonstrated for the first time. A TiN gate withLG= ~8 nm was defined by helium ion beam lithography (HIBL) using hydrogen silsesquioxane as a resist. As compared with the paraelectric HfO2gate oxide, the FE Hf0.5Zr0.5O2gate dielectric leads to a suppression of the off-state current (IOFF) by ~2 orders of magnitude and a reduction of the minimum subthreshold swing (SS) to~33 mV dec-1, along with an enhancement of the on/off ratio in the reverse-sweep direction in JLTs withLG= ~8 nm. JLTs with a longLG= 5 ?m were also investigated for comparison, revealing a decrease ofIOFFby ~25× and the sub-60 mV dec-1SS across ~3 orders of drain current (ID) under a large drain voltage (VD= 0.5 V) operation during the reverse sweep in FE JLTs. A time domain analysis indicated that the transient negative capacitance (TNC) effect takes place in the FE gate dielectric. A physical model was proposed to account for the TNC effect and the sub-60 mV dec-1SS based on the capacitance increase during the FE polarization switching. This study also demonstrates for the first time the fabrication of nanoelectronic devices with a sub-10 nm critical dimension by using the HIBL technique with a damage-free dose. ? The Royal Society of Chemistry 2021. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85110774847&doi=10.1039%2fd1tc00431j&partnerID=40&md5=da742218a5f3b0f480d9e8620fd93cff https://scholars.lib.ntu.edu.tw/handle/123456789/598401 |
ISSN: | 20507534 | DOI: | 10.1039/d1tc00431j |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。