https://scholars.lib.ntu.edu.tw/handle/123456789/598425
標題: | Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices | 作者: | Wang C.-Y Chou C.-Y Shiue H.-F Chen H.-Y Ling C.-H Shyue J.-J Chen M.-J. MIIN-JANG CHEN |
關鍵字: | Atomic layer annealing;Atomic layer deposition;Titanium nitride;Work function;Annealing;Atoms;Crystallinity;Energy transfer;MOS devices;MOSFET devices;Nanotechnology;Plasma applications;Temperature;Thin films;Tin;Annealing techniques;Atomic layer;Atomic-layer deposition;Electronic performance;Lows-temperatures;Metal-gate;Nanoscale MOSFETs;TiN metal gate;TiN thin films | 公開日期: | 2022 | 卷: | 585 | 來源出版物: | Applied Surface Science | 摘要: | Tailoring the work function of metal gates at a low temperature is critical to the electronic performance of advanced nanoscale MOSFET devices. In this paper, the work function of TiN thin films is effectively altered by the atomic layer annealing (ALA) technique, i.e. the layer-by-layer, in-situ argon plasma treatment incorporated into each atomic layer deposition cycle. The density, stoichiometry, and crystallinity of TiN thin films can be significantly improved by the ALA treatment at a low temperature of only 300℃, which leads to a wide tunability of the work function from 4.52 to 4.03 eV of the TiN metal gate. The sufficiently low work function of 4.03 eV is highly favorable to the low power consumption in n-type MOSFETs. The result indicates that the ALA technique is an advantageous approach to modulating the physical and material properties of metal gates in nanoscale MOS devices by precise energy transfer with atomic-scale accuracy. ? 2022 |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124417671&doi=10.1016%2fj.apsusc.2022.152748&partnerID=40&md5=24fb5237034e673be00a05ea12eff7b1 https://scholars.lib.ntu.edu.tw/handle/123456789/598425 |
ISSN: | 01694332 | DOI: | 10.1016/j.apsusc.2022.152748 |
顯示於: | 材料科學與工程學系 |
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