https://scholars.lib.ntu.edu.tw/handle/123456789/606479
標題: | LOW TEMPERATURE ELECTRICAL TRANSPORT IN70GE:GA SAMPLE IN MAGNETIC FIELDS | 作者: | Errai M Amrane S CHI-TE LIANG |
關鍵字: | Density of States; Electron-Electron Interactions; Electronic Transport; Low Temperature; Metal-Insulator Transition; Metallic Electrical Conductivity; Variable Range Hopping Conduction; Weak Localization; | 公開日期: | 2021 | 卷: | 13 | 期: | 4 | 起(迄)頁: | 170-178 | 來源出版物: | International Journal on Technical and Physical Problems of Engineering | 摘要: | In this paper, we have presented the electronic transport phenomena of a three-dimensional70Ge: Ga material at sufficiently low temperatures. In particular, we study the temperature (T) and magnetic field (B) dependences of the low-temperature electrical conductivity. We find that in the metallic face of σ (BT,) the metal-insulating transition (MIT), the described by () () σ σ B,T = σ B, T = 0 K + mT (BT,) S can be, where S = 1/3 or 1/2 in the transport regime where weak localization (WL) and the electron-electron interactions (EEI) are the dominant conduction mechanisms. However, in the insulator face of the MIT, the electric conduction generally tracks the Mott variable range hopping (VRH) 0.25 (ln ((B,T ? s)) T) ? for B > 5.3 T. The effect of the applied magnetic field on the characteristic conductivity of Mott, the characteristic temperature of Mott, the localization length, the electronic density of states σM (DOS) near the Fermi energy x EF TM and the Mott hopping distance has been studied. The experimental data are taken on a70Ge:Ga material which was prepared by Itoh and co-workers [Phys. Rev. B 60, 15817 (1999)]. RM. ? 2021, International Organization on 'Technical and Physical Problems of Engineering'. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123710645&partnerID=40&md5=cabc97b40cd2a078daa51a7190674bab https://scholars.lib.ntu.edu.tw/handle/123456789/606479 |
ISSN: | 20773528 |
顯示於: | 物理學系 |
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