https://scholars.lib.ntu.edu.tw/handle/123456789/606575
標題: | Correlation of grain orientations and the thickness of gradient MoS2films | 作者: | Chang H.-P Hofmann M Hsieh Y.-P Chen Y.-S Lin J.G. Mario Hofmann |
關鍵字: | High resolution transmission electron microscopy; Layered semiconductors; Raman spectroscopy; Sulfur compounds; Cross-sectional transmission electron microscopy; Different thickness; Fourier transform spectrum; Gradient film; Grain orientation; Growth conditions; Peak area ratios; Polarized raman spectroscopy; Synthesised; Transmission electron microscopy images; Molybdenum compounds | 公開日期: | 2021 | 卷: | 11 | 期: | 54 | 起(迄)頁: | 34269-34274 | 來源出版物: | RSC Advances | 摘要: | In this study, we synthesized gradient MoS2 films with a home-made suspended mask and characterized them by transmission electron microscopy (TEM) and Raman spectroscopy. The advantage of using gradient films is to simultaneously produce numerous samples under the same growth condition but with different thicknesses. The cross-sectional TEM images and their Fourier transform spectra revealed the thickness dependency of the grain orientations for synthetic MoS2 films. Combining the TEM results and the data of Raman A1g and E12g peaks, we found the correlation between the grain orientation and the A1g/E12g peak area ratio. We demonstrated the potential of using the non-polarized Raman Spectroscopy to characterize the grain structures of synthetic MoS2 films. This journal is ? The Royal Society of Chemistry. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120401217&doi=10.1039%2fd1ra05982c&partnerID=40&md5=5f685e03eacde24bc8b9a91e4c37cc01 https://scholars.lib.ntu.edu.tw/handle/123456789/606575 |
ISSN: | 20462069 | DOI: | 10.1039/d1ra05982c |
顯示於: | 物理學系 |
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