Analytical Modeling of Tunnel-Junction Transistor Lasers
Journal
IEEE Journal of Selected Topics in Quantum Electronics
Journal Volume
28
Journal Issue
1
Date Issued
2022
Author(s)
Abstract
Compared with transistor lasers (TLs), tunnel-junction transistor lasers (TJTLs) are more easily modulated with the voltage across base-collector (BC) junction. In this work, the charge-control model and modified rate equation of TJTLs which includes the Franz-Keldysh effect and direct tunneling is developed. We conduct DC and AC analysis with our model and show that the doping concentration in the BC junction plays a key role in the capability to voltage modulate TJTLs since it affects the junction field. A trade-off between the optical power and capability of the voltage modulation emerges as a concern for designing the doping concentration. We also study the effect of the quantum well (QW) position. The result shows that the QW closer to the BC junction can obtain a higher confinement factor to achieve better output power and modulation bandwidth. ? 1995-2012 IEEE.
Subjects
Franz-Keldysh effect
Optical frequency response
Transistor laser
Tunnel-junction transistor laser
Economic and social effects
Modulation
Quantum well lasers
Semiconductor quantum wells
Transistors
Charge control model
Confinement factor
Direct tunneling
Doping concentration
Modulation bandwidth
Transistor lasers
Voltage modulations
Tunnel junctions
SDGs
Type
journal article