Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation
Journal
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Journal Volume
2021-September
Pages
159-162
Date Issued
2021
Author(s)
Abstract
Field-free switching of perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) is investigated using micromagnetic simulation to evaluate the SOT critical current density (JC,SOT). The spin-transfer torque (STT) can break the symmetry and ensure the deterministic switching of p-SOTMTJ without the external magnetic field. The decreasing SOT pulse width (tSOT) below 1 ns causes the significant increase of JC,SOT. The increasing STT current density (JSTT) can overcome the damping torque and reduce the JC,SOT. For a short tSOT of 0.2 ns, the increase of STT current density (JSTT) from 0.64 MA/cm2 to 0.97 MA/cm2(VSTT from 0.2 V to 0.3 V) reduces the JC,SOT by 36%. As the spin Hall angle (θSH) of SOT channels increases from 0.28 to 0.5, the JC,SOT can further be reduced by 46%. ? 2021 IEEE.
Subjects
critical current
field-free switching
micromagnetic simulation
MTJ
SOT-MRAM
Current density
Magnetic logic devices
MRAM devices
Tunnel junctions
Current reduction
Field-free switching
Magnetic tunnel junction
Micromagnetic simulations
Spin orbits
Spin transfer torque
Torque assists
Torque current
Magnetic recording
Type
conference paper