https://scholars.lib.ntu.edu.tw/handle/123456789/606970
標題: | Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier | 作者: | Chiu J Li S Lee M Yen C Chen T Chou C CHEE-WEE LIU |
關鍵字: | Amorphous InGaZnO (a-IGZO);band alignment;double layers;Etching;Hysteresis;In-Ga-Zn-O;Insulators;Logic gates;Metals;mobility enhancement;Plasma temperature;quantum well;Thin film transistors;thin-film transistor (TFT).;Amorphous films;Energy gap;Gallium compounds;Semiconducting indium compounds;Semiconductor quantum wells;Silica;Solvents;Thin film circuits;Thin films;Wide band gap semiconductors;Zinc compounds;Amorphous InGaZnO;Band alignments;C. thin film transistor (TFT);Double layers;In-ga-zn-O;Insulator;Mobility enhancement;Quantum-wells;Thin-film transistor . | 公開日期: | 2021 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | The double-layer a-IGZO thin film transistors (DL-TFTs) using a quantum well channel and a top barrier can reduce the subthreshold swing and hysteresis by 0.73x and 0.13x, respectively, in the transfer characteristics using the bottom gate sweep as compared to the single-layer TFTs (SL-TFTs). The wide bandgap barrier on top of the narrow bandgap IGZO channel serves as a protection layer between the IGZO channel and the SiO2 top gate insulator to prevent plasma-induced damage on the IGZO channel caused by the S/D metal etching and the top gate insulator deposition. As for the mobility using the bottom gate operation with the top gate grounded, the DL-TFTs show higher mobility (1.06x) at the room temperature due to less Coulomb scattering caused by the plasma-induced damage for percolation conduction, while the SL-TFTs have higher mobility at low temperatures due to the improved hopping efficiency for thermally activated hopping. The hysteresis is temperature independent down to 160 K, indicating the electrons tunneling between the channel and the top gate insulator is dominant. As for the reliability, DL-TFT has a smaller Vth shift than SL-TFT under both positive bias temperature stress (PBTS) due to less subgap defect in the channel. Author |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120085935&doi=10.1109%2fJEDS.2021.3130211&partnerID=40&md5=ebce5deb2246d84471c0375b6bd1c986 https://scholars.lib.ntu.edu.tw/handle/123456789/606970 |
ISSN: | 21686734 | DOI: | 10.1109/JEDS.2021.3130211 |
顯示於: | 電機工程學系 |
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