|Title:||First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications||Authors:||Chang S
JIUN-YUN LI et al.
|Keywords:||Complementary field-effect-transistor (CFET);heterogeneous integration;hybrid complementary metal-oxide-semiconductor (Hybrid CMOS);indium gallium zinc oxide (IGZO) Radio Frequency Integrated Circuit (RFIC);Inverters;Logic gates;oxide semiconductor (OS);Radio frequency;static random access memory (SRAM);Surface treatment;Threshold voltage;Tin;Transistors;vertically stacked.||Issue Date:||2022||Source:||IEEE Transactions on Electron Devices||Abstract:||
In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices with poly-Si as guard ring material simultaneously were fabricated in the same process. High
|Appears in Collections:||電機工程學系|
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