High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures
Journal
LEOS Summer Topical Meeting
Journal Volume
2021-July
Date Issued
2021
Author(s)
Abstract
GeSn is a promising material for high-performance electronic and photonic devices. In this work, we present our recent achievements on high electron mobility in GeSn n-MOSFETs, an extremely low contact resistivity in metal/n-GeSn junctions, and a high tunneling current density in GeSn Esaki diodes with large peak-to-valley current ratios. Last, we present the first two-dimensional hole gas in the undoped GeSn/Ge heterostructures with strong spin-orbit coupling (SOC) effects, which is tunable by top gating. ? 2021 IEEE.
Subjects
Component
Formatting
Insert
Style
Styling
Photonic devices
Semiconductor alloys
Si-Ge alloys
Tin alloys
Electronic spins
Electronics devices
Performance
Photonics devices
Spin-orbit couplings
MOSFET devices
Type
conference paper