Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
10
Journal Issue
6
Date Issued
2021
Author(s)
Abstract
This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future. ? 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
Subjects
Economic and social effects
Hafnium compounds
Iron compounds
Power transistors
Zirconium compounds
Ferroelectric field effect transistors
Learning trajectories
Memory window
Pulse stimulation
Pulsewidths
Remnant polarizations
Trade off
Ultra-thin
Field effect transistors
Type
journal article