Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts
Journal
CrystEngComm
Journal Volume
17
Journal Issue
23
Pages
4276-4280
Date Issued
2015
Author(s)
Chiou C.-J.; Chiu S.-P.; Lin J.-J.; Chou Y.-C.
DOI
CRECF
Abstract
We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts. © The Royal Society of Chemistry 2015.
Publisher
Royal Society of Chemistry
Type
journal article