https://scholars.lib.ntu.edu.tw/handle/123456789/616360
標題: | Understanding the effect of sputtering pressures on the thermoelectric properties of GeTe films | 作者: | Daichakomphu N. Abbas S. Chou T.-L. Chen L.-C. Chen K.-H. Sakulkalavek A. Sakdanuphab R. LI-CHYONG CHEN |
關鍵字: | GeTe film;RF magnetron sputtering;Thermoelectric;Working pressure | 公開日期: | 2022 | 卷: | 893 | 來源出版物: | Journal of Alloys and Compounds | 摘要: | In this work, we study the effect of sputtering pressures on the thermoelectric properties of GeTe films. The working pressures were differentiated from 3 to 30 mTorr, and the as-deposited films were annealed at 623 K for 10 min in Ar atmosphere. The results show that the working pressure has a significant effect on the Ge content and crystalline size. The turning trend of the Seebeck coefficient with different sputtering pressures corresponds to the Ge content. The surface morphology of annealed film will change from cracks to voids with increasing sputtering pressure. This behavior can be explained by the growth mechanisms model. The voids and relatively low crystalline size of GeTe films affect to the reduction of the electrical conductivity. In addition, the void content decreased as film thickness was increased. Therefore, controlling the working pressures in the sputtering process and film thickness is important for the thermoelectric performance of GeTe thin film. In our work, we prove that the thermoelectric properties of GeTe films could be optimized effectively by simply tuning different sputtering conditions. © 2021 Elsevier B.V. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117714588&doi=10.1016%2fj.jallcom.2021.162342&partnerID=40&md5=905c4b84debc62c8fa4db859ca11a274 https://scholars.lib.ntu.edu.tw/handle/123456789/616360 |
ISSN: | 09258388 | DOI: | 10.1016/j.jallcom.2021.162342 | SDG/關鍵字: | Carrier concentration;Film thickness;Germanium;Germanium compounds;Magnetron sputtering;Morphology;Pressure effects;Surface morphology;Tellurium compounds;Thermoelectric equipment;Thermoelectricity;Thin films;As-deposited films;Crystalline size;Film-thickness;Ge-content;Gete film;R.F. magnetron sputtering;Sputtering pressures;Thermoelectric;Thermoelectric properties;Working pressures;Working pressure |
顯示於: | 凝態科學研究中心 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。