Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth of carbon nanotubes
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
44
Journal Issue
1 A
Pages
365-370
Date Issued
2005
Author(s)
Juan C.-P.
Chen K.-J.
Tsai C.-C.
Lin K.-C.
Hong W.-K.
Hsieh C.-Y.
Wang W.-P.
Lai R.-L.
Chen L.-C.
Cheng H.-C.
Abstract
The density distribution of CNTs is one of the crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7V/μm. to 2.2 V/μm and the field-emission current density increased from 2.6 × 10-8 A/cm2 to 2.4 × 10-4 A/cm 2 when the applied field was 4 V/μm. © 2005 the japan society of applied physics.
Subjects
Carbon nanotubes;Density control of CNTs;Inactive thin-film layer
Other Subjects
Catalysts;Electric fields;Indium compounds;Optimization;Photolithography;Plasma enhanced chemical vapor deposition;Scanning electron microscopy;Silicon compounds;Synthesis (chemical);Thin films;Density control of CNT;Inactive thin-film layers;Microwave plasma-enhanced chemical vapor deposition (MPCVD);Plasma treatment;Carbon nanotubes
Type
journal article