https://scholars.lib.ntu.edu.tw/handle/123456789/616399
標題: | Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire | 作者: | Dhara S. Chen Y.F. Hsu C.W. LI-CHYONG CHEN YANG-FANG CHEN |
公開日期: | 2004 | 卷: | 84 | 期: | 18 | 起(迄)頁: | 3486-3488 | 來源出版物: | Applied Physics Letters | 摘要: | The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-2542466915&doi=10.1063%2f1.1738172&partnerID=40&md5=c6470bfc4b25b688850ef1e81b3957fc https://scholars.lib.ntu.edu.tw/handle/123456789/616399 |
ISSN: | 00036951 | DOI: | 10.1063/1.1738172 | SDG/關鍵字: | Annealing;Band structure;Chemical vapor deposition;Electron transitions;Focusing;High resolution electron microscopy;Ion beams;Ion implantation;Irradiation;Nanostructured materials;Nitrogen;Photoluminescence;Transmission electron microscopy;Band-to-band transitions;Dynamic evolution;Selected area electron diffraction (SAED);Yellow luminescence;Gallium nitride |
顯示於: | 凝態科學研究中心 |
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