https://scholars.lib.ntu.edu.tw/handle/123456789/616435
標題: | Enhancement in field emission of silicon microtips by bias-assisted carburization | 作者: | Kichambare P.D. Tarntair F.G. Chen L.C. Chen K.H. Cheng H.C. LI-CHYONG CHEN |
公開日期: | 2000 | 卷: | 18 | 期: | 6 | 起(迄)頁: | 2722-2729 | 來源出版物: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 摘要: | The deposition of ultrathin carbon layers on silicon microtips was implemented by bias-assisted carburization (BAC) using microwave plasma chemical vapor deposition technique. BAC process was performed at low pressure and low deposition temperature. The high emission current, low temperature and large-area growth capability of the BAC silicon microtip emitter were investigated. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034314705&doi=10.1116%2f1.1320809&partnerID=40&md5=7aa39d1163450efe8be05371e3cbee79 https://scholars.lib.ntu.edu.tw/handle/123456789/616435 |
ISSN: | 10711023 | DOI: | 10.1116/1.1320809 | SDG/關鍵字: | Carbon;Characterization;Deposition;Electric potential;Plasma enhanced chemical vapor deposition;Silicon;Bias-assisted carburization (BAC);Field emission;Silicon microtips;Carburizing |
顯示於: | 凝態科學研究中心 |
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