https://scholars.lib.ntu.edu.tw/handle/123456789/616436
標題: | Growth, characterization, and properties of carbon nitride with and without silicon addition | 作者: | Chen L.C. Wu C.T. Wu J.-J. Chen K.H. LI-CHYONG CHEN |
公開日期: | 2000 | 卷: | 14 | 期: | 2-3 | 起(迄)頁: | 333-348 | 來源出版物: | International Journal of Modern Physics B | 摘要: | Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034731751&doi=10.1142%2fs0217979200000340&partnerID=40&md5=1a71b43eef083cb2746550801590eee6 https://scholars.lib.ntu.edu.tw/handle/123456789/616436 |
ISSN: | 02179792 | DOI: | 10.1142/s0217979200000340 | SDG/關鍵字: | carbon;nitrogen derivative;silicon;conference paper;crystal structure;cyclotron;microwave radiation;morphology;optics;structure analysis;system analysis |
顯示於: | 凝態科學研究中心 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。