https://scholars.lib.ntu.edu.tw/handle/123456789/616441
標題: | Ellipsometric study of carbon nitride thin films with and without silicon addition | 作者: | Chen L.C. Lin H.Y. Wong C.S. Chen K.H. Lin S.T. Yu Y.C. Wang C.W. Lin E.K. Ling K.C. LI-CHYONG CHEN |
關鍵字: | Carbon nitride;Ellipsometry;Raman;RBS | 公開日期: | 1999 | 卷: | 8 | 期: | 2-5 | 起(迄)頁: | 618-622 | 來源出版物: | Diamond and Related Materials | 摘要: | Optical properties of carbon nitride thin films, with and without silicon addition, grown by magnetron sputtering, have been studied by ellipsometry. The composition, structure and bonding structure of the films were analyzed by Rutherford backscattering (RBS), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman and Infrared spectroscopy (IR). CN and SiCN films exhibiting predominantly sp3 and sp2 bonding structures with nitrogen content up to 55 at.% can be obtained. It was found that the index of refraction, n, is a strong function of the nitrogen and silicon content. The highest value of n that we can achieve is about 2.12-2.16 in the visible, comparable with that of pure diamond like carbon (DLC) film. The index of refraction decreases with increasing nitrogen content in the film, suggesting an increase in the bond polarizability of the material. On the other hand, a significant increase of the index of refraction is observed with the addition of silicon. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032614256&doi=10.1016%2fs0925-9635%2898%2900281-7&partnerID=40&md5=b0eb99d1313d888968fdb271c20468ab https://scholars.lib.ntu.edu.tw/handle/123456789/616441 |
ISSN: | 09259635 | DOI: | 10.1016/s0925-9635(98)00281-7 | SDG/關鍵字: | Atomic force microscopy;Chemical bonds;Ellipsometry;Light polarization;Magnetron sputtering;Molecular structure;Refractive index;Rutherford backscattering spectroscopy;Silicon;Thin films;Transmission electron microscopy;X ray photoelectron spectroscopy;Carbon nitride;Nitrides |
顯示於: | 凝態科學研究中心 |
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