https://scholars.lib.ntu.edu.tw/handle/123456789/625174
標題: | An Ultrasensitive Cmos-Mems Tuned-Mass-Damper (Tmd) Based Voltmeter | 作者: | Huang P.-C Chen T.-Y Tsai C.-P WEI-CHANG LI |
關鍵字: | mode localization; resonant voltmeter; Tuned-mass-damper; weakly coupled resonators | 公開日期: | 2022 | 卷: | 2022-January | 起(迄)頁: | 860-863 | 來源出版物: | IEEE Symposium on Mass Storage Systems and Technologies | 摘要: | An ultrasensitive micromechanical voltmeter has been demonstrated, for the first time, using tuned-mass-damper (TMD) based mode-localized structure in a CMOS-MEMS process. Particularly, a 0.35-m CMOS-MEMS based micromechanical clamped-clamped resonator with miniaturized cantilever beams attached aside, which serve as anti-resonating-TMD structures, yields deviations in resonance frequency as high as -3376 ppm/V, when applying a voltage to modify the stiffness of the TMD cantilevers. With a sensitivity on par with that reports in [1], this work presents a much pler structural design with a 10× smaller footprints thanks to the use of miniaturized TMD structures on a single resonator, instead of two or more identical weakly-coupled ones used in the conventional mode-localized structures [2]. The miniaturized acceptors, which has smaller effective mass and stiffness compared to the conventional counterparts, would response a larger mode localization effect for a certain amount of perturbation. © 2022 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85126395006&doi=10.1109%2fMEMS51670.2022.9699750&partnerID=40&md5=af3a25ce95fc09322f783bdd7adb477b https://scholars.lib.ntu.edu.tw/handle/123456789/625174 |
ISSN: | 21601968 | DOI: | 10.1109/MEMS51670.2022.9699750 | SDG/關鍵字: | Acoustic devices; CMOS integrated circuits; MEMS; Resonators; Stiffness; Structural design; CMOS-MEMS; Coupled resonator; Localized structures; MEMS process; Micro-mechanical; Mode localization; Resonant voltmeter; Tuned mass dampers; Ultrasensitive; Weakly coupled resonator; Nanocantilevers |
顯示於: | 應用力學研究所 |
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