https://scholars.lib.ntu.edu.tw/handle/123456789/625366
標題: | Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography processes | 作者: | HSUEN-LI CHEN Chao W.-C Ko F.-H Chu T.-C Cheng H.-C. |
關鍵字: | ArF lithography; Bottom antireflective coatings; Diluted; KrF lithography; Low-dielectric constant materials | 公開日期: | 2003 | 卷: | 42 | 期: | 6 B | 起(迄)頁: | 3885-3889 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 摘要: | In this paper, we report on a bottom antireflective coating (BARC) layer for both KrF and ArF lithography processes. The antireflective layers are composed of diluted low-dielectric constant materials, such as bisbenzo(cyclobutene) (BCB), fluorinated poly(arylene)ether (FLARE) and SiLK. By adding an optimized thickness of diluted low-dielectric constant materials, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. Diluted low-dielectric constant materials also have great potential to be used as BARC layers on various highly-reflectance substrates for metalinterconnect applications. Using this structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. After the lithography procedure, the diluted low-dielectric constant layer need not be removed. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0041862477&doi=10.1143%2fjjap.42.3885&partnerID=40&md5=3fac33280160bd39aa463222397ce007 https://scholars.lib.ntu.edu.tw/handle/123456789/625366 |
ISSN: | 00214922 | DOI: | 10.1143/jjap.42.3885 | SDG/關鍵字: | Antireflection coatings; Aromatic hydrocarbons; Gas lasers; Interfaces (materials); Permittivity; Bottom antireflective coatings (BARC); Photolithography |
顯示於: | 材料科學與工程學系 |
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