|Title:||Low dielectric constant polymer materials as bottom antireflective coating layers for both KrF and ArF lithography||Authors:||HSUEN-LI CHEN
|Keywords:||ArF lithography; Bottom antireflective coatings; KrF lithography; Low-dielectric constant materials; SiLK||Issue Date:||2002||Journal Volume:||41||Journal Issue:||6 B||Start page/Pages:||4046-4050||Source:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||Abstract:||
In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described.
|ISSN:||00214922||DOI:||10.1143/jjap.41.4046||SDG/Keyword:||Antireflection coatings; Etching; Fluorine compounds; Interfaces (materials); Light reflection; Masks; Permittivity; Polymers; Substrates; Thermodynamic stability; Metal interconnects; Photolithography|
|Appears in Collections:||材料科學與工程學系|
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