Low dielectric constant polymer materials as bottom antireflective coating layers for both KrF and ArF lithography
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
41
Journal Issue
6 B
Pages
4046-4050
Date Issued
2002
Author(s)
Abstract
In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described.
Subjects
ArF lithography; Bottom antireflective coatings; KrF lithography; Low-dielectric constant materials; SiLK
Other Subjects
Antireflection coatings; Etching; Fluorine compounds; Interfaces (materials); Light reflection; Masks; Permittivity; Polymers; Substrates; Thermodynamic stability; Metal interconnects; Photolithography
Type
journal article