https://scholars.lib.ntu.edu.tw/handle/123456789/625367
Title: | Low dielectric constant polymer materials as bottom antireflective coating layers for both KrF and ArF lithography | Authors: | HSUEN-LI CHEN Cheng H.-C Ko F.-H Chu T.-C Huang T.-Y. |
Keywords: | ArF lithography; Bottom antireflective coatings; KrF lithography; Low-dielectric constant materials; SiLK | Issue Date: | 2002 | Journal Volume: | 41 | Journal Issue: | 6 B | Start page/Pages: | 4046-4050 | Source: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | Abstract: | In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036614577&doi=10.1143%2fjjap.41.4046&partnerID=40&md5=2d6ce1abaabb5f6880483db75ded866e https://scholars.lib.ntu.edu.tw/handle/123456789/625367 |
ISSN: | 00214922 | DOI: | 10.1143/jjap.41.4046 | SDG/Keyword: | Antireflection coatings; Etching; Fluorine compounds; Interfaces (materials); Light reflection; Masks; Permittivity; Polymers; Substrates; Thermodynamic stability; Metal interconnects; Photolithography |
Appears in Collections: | 材料科學與工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.