https://scholars.lib.ntu.edu.tw/handle/123456789/625434
標題: | Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields | 作者: | Chao S.-Y Huang H.-S Huang P.-R CHUN-YEON LIN Wang M.-C. |
關鍵字: | Channel mobility; Device model; Diffusion current; Drift current; MOSFET; Nano-node process | 公開日期: | 2022 | 卷: | 12 | 期: | 2 | 來源出版物: | Crystals | 摘要: | A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables VDS and VGS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models. © 2022 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125057538&doi=10.3390%2fcryst12020295&partnerID=40&md5=a66393160db6d0244d699faad2ccd990 https://scholars.lib.ntu.edu.tw/handle/123456789/625434 |
ISSN: | 20734352 | DOI: | 10.3390/cryst12020295 |
顯示於: | 機械工程學系 |
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