|Title:||Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots||Authors:||Wu, Yu Jui
Chiang, Chih Ying
Tsao, Hung Yu
Li, Tsung Ying
Wang, Tz Ming
Lin, Min Jui
Liu, Chia You
Yeh, Ching Chen
Yang, Cheng Hsueh
|Issue Date:||1-Jan-2022||Source:||2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022||Abstract:||
In this work, we demonstrate Coulomb blockade for both Si metal-oxide-semiconductor (MOS) nanowire and Si/SiGe heterostructure finger-type quantum dots (QDs). Clear quantum oscillations of the QD conductance were observed at temperatures of 23 mK to 1.5 K. Charge stability diagrams with unambiguous boundaries were also demonstrated at 23 mK.
|Appears in Collections:||物理學系|
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