Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots
Journal
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
ISBN
9781665409230
Date Issued
2022-01-01
Author(s)
Wu, Yu Jui
Chiang, Chih Ying
Tsao, Hung Yu
Li, Tsung Ying
Wang, Tz Ming
Lin, Min Jui
Liu, Chia You
Yeh, Ching Chen
Yang, Cheng Hsueh
Abstract
In this work, we demonstrate Coulomb blockade for both Si metal-oxide-semiconductor (MOS) nanowire and Si/SiGe heterostructure finger-type quantum dots (QDs). Clear quantum oscillations of the QD conductance were observed at temperatures of 23 mK to 1.5 K. Charge stability diagrams with unambiguous boundaries were also demonstrated at 23 mK.
Event(s)
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Other Subjects
Dielectric devices; Heterojunctions; Metals; MOS devices; Nanocrystals; Oxide semiconductors; Silicon compounds; Transistors; Charge stability; Quantum oscillations; Si/SiGe heterostructures; Stability diagram; Semiconductor quantum dots
Type
conference paper