https://scholars.lib.ntu.edu.tw/handle/123456789/629647
標題: | Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques | 作者: | Hong, TC Lu, WH Wang, YH JIUN-YUN LI Lee, YJ Chao, TS |
關鍵字: | Germanium; Etching; Silicon; Epitaxial growth; Wet etching; Silicon germanium; Fabrication; Ge; germanium-tin (GeSn); nanowire (NW); selective etching; CHANNEL MOSFETS; TIN; SI | 公開日期: | 2023 | 出版社: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | 卷: | 70 | 期: | 4 | 來源出版物: | IEEE TRANSACTIONS ON ELECTRON DEVICES | 摘要: | Germanium–tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/629647 | ISSN: | 0018-9383 | DOI: | 10.1109/TED.2023.3246952 |
顯示於: | 電機工程學系 |
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