https://scholars.lib.ntu.edu.tw/handle/123456789/630114
標題: | Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors | 作者: | Jiang, Yu Sen Huang, Kuei Wen Yi, Sheng Han Wang, Chin I. Chang, Teng Jan Kao, Wei Chung Wang, Chun Yuan Yin, Yu Tung TZONG-LIN JAY SHIEH MIIN-JANG CHEN |
關鍵字: | Ferroelectric | Ferroelectric field-effect transistor | HfO 2 | Metal-ferroelectric-semiconductor structure | ZrO 2 | 公開日期: | 1-十二月-2022 | 出版社: | ELSEVIER SCI LTD | 卷: | 42 | 期: | 15 | 起(迄)頁: | 6997 | 來源出版物: | Journal of the European Ceramic Society | 摘要: | Enhanced ferroelectric properties of nanoscale ZrO2 thin films by an HfO2 seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO2/HfO2 bilayer structure. The ferroelectric field-effect transistor with the ZrO2/HfO2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf0.5Zr0.5O2 thin film, superior ferroelectric properties of the ZrO2/HfO2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/630114 | ISSN: | 09552219 | DOI: | 10.1016/j.jeurceramsoc.2022.07.031 |
顯示於: | 材料科學與工程學系 |
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