Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
Journal
Journal of the European Ceramic Society
Journal Volume
42
Journal Issue
15
Pages
6997
Date Issued
2022-12-01
Author(s)
Jiang, Yu Sen
Huang, Kuei Wen
Yi, Sheng Han
Wang, Chin I.
Chang, Teng Jan
Kao, Wei Chung
Wang, Chun Yuan
Yin, Yu Tung
Abstract
Enhanced ferroelectric properties of nanoscale ZrO2 thin films by an HfO2 seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO2/HfO2 bilayer structure. The ferroelectric field-effect transistor with the ZrO2/HfO2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf0.5Zr0.5O2 thin film, superior ferroelectric properties of the ZrO2/HfO2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates.
Subjects
Ferroelectric | Ferroelectric field-effect transistor | HfO 2 | Metal-ferroelectric-semiconductor structure | ZrO 2
SDGs
Publisher
ELSEVIER SCI LTD
Type
journal article