Photochemically-Activated p-Type CuGaO2 Thin Films for Highly-Stable Room-Temperature Gas Sensors
Journal
Journal of the Electrochemical Society
Journal Volume
170
Journal Issue
3
Date Issued
2023-03-01
Author(s)
Lin, Pei Te
Yu, Chih Ying
Ho, Sin Huei
Pan, Shiuan Wei
Jhang, Jyun Siang
Zhang, Yi Xun
Zhang, Yo Lun
Hsieh, Tian Tsz
HAO-CHIEN WANG
Huang, Chun Ying
Abstract
The photochemical activation process is a promising way to operate metal oxide gas sensors at room temperature. However, this technique is only used in n-type semiconductors. In this study, we report a highly stable p-type copper gallium oxide (CuGaO2) gas sensor fabricated through the facile sol-gel process. The sensor is capable of detecting O3 gas at room temperature, and its gas response can be further enhanced by ultraviolet (UV) activation. The highest gas response of 7.12 to 5 ppm O3 gas at a UV intensity of 10 mW cm−2 is achieved at room-temperature. In addition, the CuGaO2 sensor shows excellent long-term stability, with a degradation of approximately 3% over 90 days. These results strongly support the solution-processed CuGaO2 as a good candidate for room-temperature gas sensors.
Subjects
CuGaO 2 | Gas sensors | Photochemical activation | Sol-Gel coating
Publisher
ELECTROCHEMICAL SOC INC
Type
journal article